PART |
Description |
Maker |
IRFY044CM |
60V 0.040Ω N-Channel HEXFET Power MOSFET(60V 0.040Ω N沟道 HEXFET 功率 MOS场效应管) 60V.040ΩN沟道HEXFET功率MOSFET60V.040Ω沟道的HEXFET功率马鞍山场效应管)
|
International Rectifier, Corp.
|
ASI10730 VHB50-28S |
NPN Silicon RF Power Transistor(Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)) VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
FDP20AN06A0 FDB20AN06A0 FDB20AN06A0NL FDP20AN06A0N |
60V N-Channel PowerTrench MOSFET 60V, 45A 20mohm 45 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-Channel PowerTrench MOSFET 60V, 45A, 20m N-Channel PowerTrench MOSFET 60V, 45A, 20 milliohm N-Channel PowerTrench?? MOSFET 60V, 45A, 20m??? From old datasheet system N-Channel PowerTrench㈢ MOSFET 60V, 45A, 20mз N-Channel PowerTrench? MOSFET 60V, 45A, 20m?/a>
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor] http://
|
CN651 |
0.900W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 70 - hFE
|
Continental Device India Limited
|
2SC3254 2SC3254S |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220AB 60V/7A High-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
2SB1561-Q |
Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V
|
TY Semiconductor Co., Ltd
|
2SB507 2SB507F |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB POWER TRANSISTORS(3.0A/60V/30W) POWER TRANSISTORS(3.0A,60V,30W)
|
MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W.
|
Usha India Ltd.
|
2SA733 |
Collector-Base Voltage: VCBO=-60V Emitter to base voltage VEBO -5.0 V
|
TY Semiconductor Co., Ltd
|
FDI025N06 |
60V N-Channel PowerTrenchMOSFET N-Channel PowerTrench㈢ MOSFET 60V, 265A, 2.5mヘ N-Channel PowerTrench? MOSFET 60V, 265A, 2.5mΩ
|
Fairchild Semiconductor
|